Multi channel semiconductor device having multi dies and operation method thereof

ABSTRACT

A multi channel semiconductor device is disclosed. The multi channel device may include a substrate, a first die on the substrate and having a first channel to function as a first chip; and a second die on the substrate and having a second channel different from the first channel to function as a second chip and including the same storage capacity and physical size as the first die. An internal interface is disposed between the first and second dies. The internal interface is configured to transmit information for controlling internal operations of the first and second dies and first applied to a first recipient die of the first and second dies to the other die.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2014-0086188, filed onJul. 9, 2014, the entire contents of which are hereby incorporated byreference.

BACKGROUND

1. Field

The present disclosure relates to semiconductor devices, and moreparticularly, to a semiconductor device having multiple channels.

2. Description of the Related Art

A processing system can access a multi channel memory device beingindependently operated through different channels in one package.

A multi channel memory device that can be constituted by a volatilememory such as a DRAM can be packaged in one package after beingembodied using one die (or chip). A multi channel semiconductor devicecan be connected to a corresponding processor to independently perform adata read operation or a data write operation through respectivechannels

In the case where a multi channel semiconductor device is embodied by amono die, density may be degraded on a wafer or edge die availabilitymay be degraded due to a comparatively large size of two or morechannels.

SUMMARY

Embodiments of the inventive concept provide an operation method of asemiconductor device. The semiconductor device may include separatefirst and second dies in a package. The semiconductor device may receivefirst types of signals through first and second respective channelsindependent of each other and corresponding to the first and secondrespective dies. The operation method may include a step in which wheninformation for controlling internal operations of the first and seconddies is first applied to the first die, the first die performs theinternal operation and also transmits the information to the second diethrough an internal interface connecting the first die and the seconddie; and a step in which when the information is transferred to thesecond die, the second die performs the internal operation. When theinformation is first applied to the second die, the second die alsotransmits the information to the first die through the internalinterface.

In certain embodiments, the first and second dies are each packageddirectly on a same, single package substrate.

In certain embodiments, the first and second dies are independentlypackaged on different package substrates.

In certain embodiments, the information is one of a reset signal forresetting operations of the first and second dies and a ZQ signal for ZQcalibration operations of the first and second dies.

In certain embodiments, the internal interface is one of a wiredinterface and a wireless interface for information interfacing betweenthe first and second dies.

When the internal interface is a wired interface, it may include atleast one of an interposer, a wire bonding and a printed circuit board.When the internal interface is a wireless interface, it may perform anoptical communication.

In one embodiment, the first and second dies have the same storagecapacity and physical size as each other.

The first and second separate dies may form a DDR DRAM performing thesame data access operation as a 2 channel single die.

Embodiments of the inventive concept also provide a semiconductordevice. The semiconductor device may include a package substrate, afirst die on the package substrate, a second die on the packagesubstrate, and an internal interface. The first die may have a firstchannel to function as a first chip. The second die may have a secondchannel different from the first channel to function as a second chipand including the same storage capacity and physical size as the firstdie. The internal interface may form a internal interface disposedbetween the first and second dies, and may be configured to transmitinformation for controlling internal operations of the first and seconddies and first applied to a first recipient die of the first and seconddies to the other die.

In one embodiment, the first and second dies are each packaged directlyon the package substrate.

In one embodiment, the information is one of a reset signal forresetting operations of the first and second dies and a ZQ signal for ZQcalibration operations of the first and second dies.

In one embodiment, the first die is horizontally adjacent the seconddie.

In one embodiment, the semiconductor device is configured such thatinformation having a first type is transmitted to the first die throughthe first channel without passing between the first die and the seconddie, and is transmitted to the second die through the second channelwithout passing between the first die and the second die, and theinformation for controlling internal operations of the first and seconddies is a different type of information from the first type.

Embodiments of the inventive concept also provide a semiconductor deviceincluding: a package substrate, a first chip mounted on the substrate, asecond chip mounted on the substrate to be horizontally adjacent thefirst chip, a first channel connected to the first chip for receiving afirst type of information at the first chip, a second separate channelconnected to the second chip for receiving the first type of informationat the second chip, and an internal interface connected between thefirst chip and the second chip, the internal interface configured totransmit a second type of information different from the first typebetween the first chip and the second chip. The second type ofinformation is used by both the first chip and the second chip.

In one embodiment, the first type of information is read/write accessinformation, the second type of information is operation controlinformation applied to both the first chip and the second chip tocontrol operation of the respective chips.

In one embodiment, the second type of information relates to a resetcommand or a ZQ command.

In one embodiment, the semiconductor device is configured such thatinformation having the first type is transmitted to the first chipthrough the first channel without passing between the first chip and thesecond chip, and is transmitted to the second chip through the secondchannel without passing between the first chip and the second chip.

In one embodiment, the second type of information is operation controlinformation for the first and second chips.

In one embodiment, the semiconductor device additionally includes acontrol circuit on at least one of the first and second chips, andconfigured to receive information of the second type.

BRIEF DESCRIPTION OF THE FIGURES

Various embodiments of the inventive concept will be described below inmore detail with reference to the accompanying drawings. The embodimentsdescribed herein may, however, be embodied in different forms and shouldnot be constructed as limited to the embodiments set forth herein. Likenumbers refer to like elements throughout.

FIG. 1 is a block diagram illustrating a constitution of a semiconductordevice in accordance with exemplary embodiments of the inventiveconcept.

FIG. 2 is a block diagram illustrating another constitution of asemiconductor device in accordance with certain embodiments of theinventive concept.

FIG. 3 is a drawing illustrating a detailed embodiment of control logicsin accordance with FIG. 2, according to one exemplary embodiment.

FIG. 4 is a drawing illustrating a detailed embodiment of a ZQ engine inaccordance with FIG. 3, according to one exemplary embodiment.

FIG. 5 is a flow chart of a ZQ calibration control in accordance withFIG. 3, according to one exemplary embodiment.

FIG. 6 is a drawing illustrating an application example of the inventiveconcept applied to a memory system being stacked through a TSV (throughsilicon via), according to one exemplary embodiment.

FIG. 7 is a drawing illustrating an application example of the inventiveconcept applied to an electronic system, according to one exemplaryembodiment.

FIG. 8 is a block diagram illustrating an application example of theinventive concept applied to a computing device, according to oneexemplary embodiment.

FIG. 9 is a drawing illustrating an application example of the inventiveconcept applied to a smart phone, according to one exemplary embodiment.

FIG. 10 is a block diagram illustrating an application example of theinventive concept applied to a mobile device, according to one exemplaryembodiment.

FIG. 11 is a block diagram illustrating an application example of theinventive concept applied to an optical I/O schema, according to oneexemplary embodiment.

FIG. 12 is a block diagram illustrating an application example of theinventive concept applied to a portable multimedia device, according toone exemplary embodiment.

FIG. 13 is a block diagram illustrating an application example of theinventive concept applied to a personal computer, according to oneexemplary embodiment.

FIG. 14 is a block diagram illustrating a modified embodiment of thesemiconductor device of FIG. 1, according to one exemplary embodiment.

FIG. 15 is a block diagram illustrating an internal constitution of onechip of FIG. 14, according to one exemplary embodiment.

DETAILED DESCRIPTION

Embodiments of inventive concepts will be described more fullyhereinafter with reference to the accompanying drawings, in whichembodiments of the invention are shown. This inventive concept may,however, be embodied in many different forms and should not be construedas limited to the embodiments set forth herein. In the drawings, thesize and relative sizes of layers and regions may be exaggerated forclarity. Like numbers refer to like elements throughout.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items and may beabbreviated as “/”.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. Unless indicated otherwise, these terms areonly used to distinguish one element from another, for example as anaming convention. For example, a first chip could be termed a secondchip, and, similarly, a second chip could be termed a first chip withoutdeparting from the teachings of the disclosure.

It will be further understood that the terms “comprises” and/or“comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

It will be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, there areno intervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.). However, the term “contact,” as used herein refers todirect contact (i.e., touching) unless the context indicates otherwise.

Embodiments described herein will be described referring to plan viewsand/or cross-sectional views by way of ideal schematic views.Accordingly, the exemplary views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the disclosedembodiments are not limited to those shown in the views, but includemodifications in configuration formed on the basis of manufacturingprocesses. Therefore, regions exemplified in figures may have schematicproperties, and shapes of regions shown in figures may exemplifyspecific shapes of regions of elements to which aspects of the inventionare not limited.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

Terms such as “same,” “planar,” or “coplanar,” as used herein whenreferring to orientation, layout, location, shapes, sizes, amounts, orother measures do not necessarily mean an exactly identical orientation,layout, location, shape, size, amount, or other measure, but areintended to encompass nearly identical orientation, layout, location,shapes, sizes, amounts, or other measures within acceptable variationsthat may occur, for example, due to manufacturing processes. The term“substantially” may be used herein to reflect this meaning.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present application, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Although corresponding plan views and/or perspective views of somecross-sectional view(s) may not be shown, the cross-sectional view(s) ofdevice structures illustrated herein provide support for a plurality ofdevice structures that extend along two different directions as would beillustrated in a plan view, and/or in three different directions aswould be illustrated in a perspective view. The two different directionsmay or may not be orthogonal to each other. The three differentdirections may include a third direction that may be orthogonal to thetwo different directions. The plurality of device structures may beintegrated in a same electronic device. For example, when a devicestructure (e.g., a memory cell structure or a transistor structure) isillustrated in a cross-sectional view, an electronic device may includea plurality of the device structures (e.g., memory cell structures ortransistor structures), as would be illustrated by a plan view of theelectronic device. The plurality of device structures may be arranged inan array and/or in a two-dimensional pattern.

FIG. 1 is a block diagram illustrating a constitution of a semiconductordevice in accordance with exemplary aspects of the inventive concept.

Referring to FIG. 1, a semiconductor device 300 includes a first die 100and a second die 200. The first and second dies 100 and 200 can bepackaged together in a mono package. As described herein, a mono packagerefers to a semiconductor device including a plurality of dies on asingle package substrate (e.g., package substrate 50). At least two ofthe dies may be at the same height above the package substrate. Forexample, a mono package may include a plurality of chips, each chipdisposed at a first level above the package substrate, so that the chipsare horizontally adjacent to each other. A semiconductor device may bein the form of a mono package. The term “semiconductor device,” however,may also be used to generally refer to other items, such as apackage-on-package device, or simply a semiconductor chip or a packagewith a single chip.

In one embodiment, the first die 100 is connected to a first channel andfunctions as a first chip and the second die 200 is connected to asecond channel independent of the first channel and functions as asecond chip. In one embodiment, the second die 200 has the same storagecapacity and die size for storing data as the first die 100.

An internal interface for transmitting information for controlling aninternal operation of the first and second dies 100 and 200 between eachother is disposed between the first die 100 and the second die 200. Theinternal interface may include various circuitry such as, for example,first and second buffers 110 and 210 and first and second pads PA1 andPA2. The internal interface may also include a conductive lineconnecting between the first die 100 and second die 200. For example,the conductive line may extend along the package substrate (e.g., it maybe formed in and/or on the package substrate 50).

In certain embodiments described herein, a die refers to an individualchip manufactured from a wafer. A plurality of dies of before beingseparated from a wafer may be manufactured at once through varioussemiconductor manufacturing processes for producing an individual chip.The various semiconductor manufacturing processes may include, forexample, an oxidation process, a photolithography process, a thin filmformation process, an etching process, and/or a CMP process. One diebecomes one chip and two or more dies constitute two or more chips thatmay be used to form, for example, one multi channel semiconductordevice.

The two dies of the multi channel semiconductor device may be formed oftwo chips, with one chip accessed for certain types of signals or typesof accesses through one respective channel and the other chip accessedfor the same types of signals or types of accesses through anotherrespective channel. Some types of accesses that may be performed throughthe first or second channels include, for example, read and write accessrequests. As such, information having a first type (e.g., read/writeaccess information such as a read/write command, address, and/or data)may be transmitted to the first chip through the first channel withoutpassing between the first chip and the second chip, and may betransmitted to the second chip through the second channel withoutpassing between the first chip and the second chip.

In one embodiment, the first channel CH-A is an exclusive channel forthe first die 100 and the second channel CH-B is an exclusive channelfor the second die 200.

The first and second channels CH-A and CH-B may be connected to a memorycontroller that communicates with a host such as a microprocessor. Whena data read request or a data write request is received from the host,the memory controller applies a read command or a write command to thesemiconductor device 300 through the first and second channels CH-A andCH-B.

For example, the first channel CH-A and second channel CH-B may beindependent of each other, such as physically separate from each other.As such, it may be possible to send/receive commands, addresses, and/ordata between a controller and the first chip 100 at the same time assending/receiving commands, addresses, and/or data between thecontroller and the second chip 200.

In one embodiment, the first die 100 receives a command, an address anddata through the first channel CH-A. The first die 100 outputs data readfrom a memory cell through the first channel CH-A.

Similarly, the second die 200 may receive a command, an address and datathrough the second channel CH-B. The second die 200 outputs data readfrom a memory cell through the second channel CH-B.

The first and second dies 100 and 200 may be manufactured on the samewafer or different wafers prior to being included in the semiconductordevice 300.

In one embodiment, although the semiconductor device 300 has two dies,the semiconductor device 300 operates as a 2-channel semiconductormemory device being formed by one die. In this case, certain controlsignals, such as a reset signal for resetting an operation of the firstand second dies 100 and 200 and a ZQ signal for controlling a ZQcalibration operation of the first and second dies 100 and 200 withrespect to an external resistor ER external to the dies may be appliedto any one of the first and second dies 100 and 200 (referred to as afirst recipient, or direct recipient die), and is then applied throughthe receiver die to the other of the first and second dies 100 and 200(referred to as second recipient, or indirect recipient die). Forexample, a ZQ signal received by the first die 100 may be used tocontrol a ZQ calibration operation of the first die 100, andadditionally may be transmitted to the second die 200, for example,through an internal interface connecting between the first die 100 andsecond die 200. In an alternative embodiment, a ZQ signal received bythe first die 100 may be used to control a ZQ calibration operation ofthe first die 100 with respect to an external resistor (ER), forexample, by being input to a first buffer 110, and by using the outputfrom the buffer for the calibration operation in the first die 100. Thesame output from the first buffer 110 may then be transmitted to thesecond die 200, for example, via an internal interface, and that outputmay be used for a calibration operation in the second die 200.

In case of installing the first and second dies 100 and 200 having thesame storage capacity and size, and channels independent of each otherin a mono package, in one embodiment, when information such as a resetsignal or a ZQ signal for controlling an internal operation of the firstand second dies 100 and 200 (generally referred to as operation controlinformation, which may relate to a reset command or ZQ command, forexample) is applied to the first die 100, the first die 100 transmitsthe information to the second die 200 through an internal interface. Forexample, information being applied to the first buffer 110 istransmitted to the second pad PA2 through the first pad PA1. Since thefirst pad PA1 and the second pad PA2 are connected to each other overwires or wirelessly, the information transmitted to the second pad PA2is provided to the second buffer 210 of the second die 200. Thus, in thecase that the information is a reset signal, the second die 200 is resetin response to the information transmitted from the first die 100. Inthe case that the information is a ZQ signal, the second die 200performs a ZQ calibration operation with respect to an external resistor(ER) in response to the information transmitted from the first die 100.

When information like the reset signal or the ZQ signal is applied tothe second die 200, the second die 200 transmits the information to thefirst die 100 through the internal interface. For example, informationbeing applied to the second buffer 210 is transmitted to the first padPA1 via the second pad PA2. Since the first pad PA1 and the second padPA2 are connected to each other over wires or wirelessly, theinformation transmitted to the first pad PA1 is provided to the firstbuffer 110 of the first die 100. Thus, in the case that the informationis a reset signal, the first die 100 is reset in response to theinformation transmitted from the second die 200. In the case that theinformation is a ZQ signal, the first die 100 performs a ZQ calibrationoperation in response to the information transmitted from the second die200.

The internal interface may include an interconnection connected betweenthe first and second pads PA1 and PA2 over wires. For example, in oneembodiment, the internal interface includes a functional circuit blockfor transmitting information between a first and second die via a wiredor wireless interconnection. In one embodiment, the interconnection canbe formed through at least one of a through via and a wire bonding in apackaging stage, for example, after dies are cut from a wafer.

However, the interconnection may be formed using other interfacecircuits and other configurations as well. This interconnection part maybe thought of as a internal interface, that is not dedicated to one ofthe chips 100 or 200, as it is configured to transfer signals to both ofthe chips and between the chips from one to another. Thus, this channelmay be referred to herein as a non-dedicated channel or common channel.It may be used to transfer different types of signals from the types ofsignals passed through the first and second channels CH-A and CH-Bdescribed above.

For example, the interconnection may include the pads on the first andsecond dies 100 and 200, conductive lines connected to the pads (e.g.,wire bonded wires, or through substrate vias), pads on the packagesubstrate 50 connected to the conductive lines, and internal wiringextending along (e.g., in and/or on) the package substrate 50.Alternatively, the first die 100 and second die 200 may each beflip-chip bonded to the package substrate 50, which includes conductivelines therein connecting between first pads that connect to terminals ofthe first die 100 and second pads that connect to terminals of thesecond die 200.

The information may be applied to one of the first and second dies 100and 200 through the first and second channels CH-A and CH-B or separatechannels.

In the case that a memory capacity of the first die 100 is 4 Gbit, sincea memory capacity of the second die 200 is also 4 Gbit, a 2-channelsemiconductor device has a memory capacity of 8 Gbit.

If embodying the 2-channel semiconductor device having a memory capacityof 8 Gbit by two dies, degradation of density on a wafer may beprevented or edge die availability may be improved as compared with acase of embodying the 2-channel semiconductor device having a memorycapacity of 8 Gbit by one die. Consequently, yield is improved andthereby a manufacturing cost burden may become lighter.

In FIG. 1, the first and second dies 100 and 200 are packaged in a monopackage but without being limited thereto. For example, 4 or 8 chips maybe included in the mono package to constitute a 4 or 8 channelsemiconductor device.

The first and second dies 100 and 200 may be, for example, a DDR4 DRAMhaving a plurality of memory cells, each including one access transistorand one capacitor.

FIG. 2 is a block diagram illustrating another constitution of asemiconductor device in accordance with certain aspects of the inventiveconcept.

Referring to FIG.2, a semiconductor device 300 a includes a first die100 a and a second die 200 a. The first and second dies 100 a and 200 acan be packaged together in a mono package or be independently packaged.For example, they may share a single package substrate on which they areboth directly mounted, or they may be formed on separate packagesubstrates. In either case, the first and second dies 100 a and 200 amay be disposed horizontally adjacent to each other.

In certain embodiments, depending on whether a single package substrateor separate package substrates are used, the first and second dies 100 aand 200 a may be packaged in different configurations, such as packageon package (PoP), ball grid array (BGA), chip scale package (CSP),plastic leaded chip carrier (PLCC), plastic dual in-line package (PDIP),die in waffle pack, die in wafer form, chip on board (COB), ceramic dualin-line package (CERDIP), plastic metric quad flat pack (MQFP), thinquad flat pack (TQFP), small outline (SOIC), shrink small outlinepackage (SSOP), thin small outline (TSOP), thin quad flatpack (TQFP),system in package (SIP), multi chip package (MCP), wafer-levelfabricated package (WFP) and wafer-level processed stack package (WSP).

The first die 100 a is connected to a first channel and functions as afirst chip and the second die 200 a is connected to a second channelindependent of the first channel and functions as a second chip. In oneembodiment, the second die 200 a has the same storage capacity and diesize for storing data as the first die 100 a.

An internal interface for transmitting information for controlling aninternal operation of the first and second dies 100 a and 200 a betweeneach other is disposed between the first die 100 a and the second die200 a. The internal interface, also referred to as an interface circuit,may include first and second buffers 111 and 211 and first and secondpads PA1-1 and PA2-1. The internal interface may include inverters IN1,IN2, IN3, IN4, IN10, IN11, IN12 and IN13 that function as a driver, aplurality of pads PA10, PA11, PA20 and PA21 and first and second controllogics 121 and 122, also referred to as a control circuit.

For example, a reset signal RESET being applied to the first buffer 111may be provided to the second buffer 211 via the first and second padsPA1-1 and PA2-1. Thus, the first die 100 a is reset, and the second die200 a may also be reset in response to the reset signal transmitted fromthe first die 100 a. A reset signal RESET being applied to the secondbuffer 211 may be provided to the first buffer 111 via the first andsecond pads PA1-1 and PA2-1. Thus, the second die 200 a is reset, andthe first die 100 a may also be reset in response to the reset signalRESET transmitted from the second die 200 a.

If a ZQ signal (or ZQ command) is applied to the first die 100 a as asignal ZQSA, it may be provided to the second control logic 221 in thesecond die 200 a as a signal 51 via the inverters IN1 and IN2, the padsPA10 and PA11 and the inverts IN3 and IN4. Thus, a ZQ calibrationoperation of the first die 100 a is performed with respect to theexternal resistor (ER), and the second die 200 a may also perform a ZQcalibration operation with respect to the external resistor (ER) inresponse to the ZQ signal transmitted from the first die 100 a. As aresult of performing the ZQ calibration operation, an internal controlsignal ICON may be generated to be used to control on-resistance valuesand on-termination values of an output driver in the second die 200 a.

If a ZQ signal (or ZQ command) is applied to the second die 200 a as asignal ZQSB, it may be provided to the first control logic 121 in thefirst die 100 a as a signal S2 via the inverters IN10 and IN11, the padsPA21 and PA20 and the inverts IN12 and IN13. Thus, a ZQ calibrationoperation of the second die 200 a is performed with respect to theexternal resistor (ER), and the first die 100 a may also perform a ZQcalibration operation with respect to the external resistor (ER) inresponse to the ZQ signal transmitted from the second die 200 a. As aresult of performing the ZQ calibration operation, an internal controlsignal ICON may be generated to be used to control on-resistance valuesand on-termination values of an output driver in the first die 100 a.

The ZQ calibration means a process of generating an impedance code beingchanged, for example, according to a change of a PVT (process, voltage,temperature) condition. A termination resistance value may be controlledusing a code generated by performing the ZQ calibration. A pad connectedto an external resistor which becomes a standard of calibration iscalled a ZQ pad and originating from that, the term “ZQ calibration” isfrequently used in this field.

As an operation speed of an electrical appliance increases, a swingwidth of a signal being interfaced between semiconductor devices isgradually reduced. The reason is to minimize a delay time it takes totransmit a signal. However, as a swing width of the signal is reduced,the effects on external noises are increased and a reflection of asignal caused by impedance mismatching becomes more severe. Theimpedance mismatching occurs due to changes of an external noise, apower supply voltage, an operation temperature and a manufacturingprocess. If the impedance mismatching occurs, it is difficult totransmit data in high speed and output data being outputted from a dataoutput stage of a semiconductor device may be distorted.

Thus, in the case that a semiconductor device receives a distortedoutput signal, problems of a setup/hold fail or an input level missjudgment may arise.

Even in the case where a PVT condition is changed, if an impedancemismatching is done according to the performance of a ZQ calibration,various problems caused by mismatching may be overcome.

FIG. 3 is a drawing illustrating a detailed embodiment of control logicsin accordance with FIG. 2, according to one exemplary embodiment.

Referring to FIG. 3, a first die 100 b and a second die 200 b may beembodied together in one package 310. The first die 100 b and the seconddie 200 b may be manufactured on the same wafer. The second die 200 bmay be disposed in mirror symmetry relative to the first die 100 b inthe one package 310.

The first die 100 b and the second die 200 b may be embodiedindependently of each other in different packages 310 a and 310 b, forexample, that together are part of one package. For example, the firstdie 100 b may be mounted on a first package substrate 50 b to form afirst package, the second die 200 b may be mounted on a second packagesubstrate 50 c to form a second package, and both the first package andsecond package may be mounted on a third package substrate 50 d, forexample to be horizontally adjacent to each other, to form apackage-on-package device, referred to as a third package.

In one embodiment, the first package substrate 50 b and second packagesubstrate 50 c may each function as an interposer, and thus may be partof an internal interface configured to transmit signals between thefirst and second dies 100 a and 100 b (e.g., via pads PQ1 and PQ2, PA10and PA11, and PA20 and PA21. In some embodiments, however, signalspassing, for example between corresponding pads of respective dies maybe transmitted through wires, such as wire-bonded wires connectedbetween the respective pads.

The first die 100 b includes a ZQ controller 130, a ZQ engine 140 and aZQ latch 150 to perform a ZQ calibration operation.

The second die 200 b includes a ZQ engine 240 and a ZQ latch 250 toperform a ZQ calibration operation. Although the ZQ controller 130 isnot installed in the second die 200 b, in the case that the ZQcontroller 130 is not installed in the first die 100 b, a ZQ controllermay be installed in the second die 200 b. However, the inventive conceptis not limited thereto and a ZQ controller, also referred to as acontrol circuit, may be installed in both the first die 100 b and thesecond die 200 b.

If a ZQ signal ZQSA is applied to the ZQ controller 130 of the first die100 b, the ZQ controller 130 applies a ZQ enable signal ZEN to the ZQengine 140. The ZQ engine 140 performs a ZQ calibration with respect toa ZQ resistor (e.g., external resistor (ER)) connected to a ZQ pad PQ1to apply a ZQ calibration code to the ZQ latch 150. The ZQ latch 150latches the ZQ calibration code in an internal latch device in responseto a ZQ latch signal ZLDATA.

If a ZQ calibration operation of the first die 100 b is completed, theZQ controller 130 receives a calibration ending signal END from the ZQengine 140.

Also, the ZQ controller 130 provides a ZQ signal ZQSA to the inverterIN1. Accordingly, the ZQ signal ZQSA indicating the beginning of a ZQcalibration operation is provided to the ZQ engine 240 of the second die200 b sequentially via the inverter IN2, the pads PA10 and PA11 and theinverters IN3 and IN4. This may be done after receiving the END signal,or prior to receiving the END signal.

The ZQ engine 240 performs a ZQ calibration with respect to a ZQresistor ER connected to a ZQ pad PQ2 to apply a ZQ calibration code ofthe second die 200 b to the ZQ latch 250. The ZQ latch 250 latches theZQ calibration code in an internal latch device in response to a ZQlatch signal ZLDATA.

Thus, a ZQ calibration operation of the first die 100 b is performed,and the second die 200 b may also perform a ZQ calibration operation inresponse to the ZQ signal transmitted from the first die 100 b. A resultof the ZQ calibration latched in the ZQ latch 250 may be used to controlon-resistance values and on-termination values of an output driver inthe second die 200 b.

If a ZQ signal ZQSB is applied to the second die 200 b, the ZQcontroller 130 of the first die 100 b can receive the ZQ signal ZQSBthrough the inverters IN10 and IN11, the pads PA21 and PA20 and theinverters IN12 and IN13. Even in this case, the ZQ controller 130 canperform a ZQ control operation the same as that described above. Aninterconnection connecting between the pads PA21 and PA20 may be by awire, such as a bonding wire BW. Alternatively, the interconnection maybe an optical transmission channel or a wireless transmission channelbesides the bonding wire, for example, based on known technologies fortransmitting signals to and from semiconductor chips.

FIG. 4 is a drawing illustrating a detailed embodiment of a ZQ engine inaccordance with FIG. 3, according to one exemplary embodiment.

Referring to FIG. 4, the ZQ engine may include a pull-up referenceresistance unit 150, a dummy reference resistance unit 160, a pull-downreference resistance unit 170, a comparison unit 142 and 143, and acounting unit 144 and 145.

The comparison unit 142 compares a voltage of a pad ZQ which is a firstcalibration node with a reference voltage VREF (generally, set toVDD/2). An up/down signal according to the comparison result isgenerated at an output terminal of the comparison unit 142. The voltageof the pad ZQ is a voltage generated by a voltage division of anexternal resistor ER (for example, 240Ω) connected to a calibration padZQ PAD and the pull-up reference resistance unit 150.

The counting unit 144 generates a pull-up code (PCODE<0:N>) in responseto the up/down signal. Parallel resistors (each resistance value isdesigned to conform Binary Weight) in the pull-up reference resistanceunit 150 are turned on/off by the pull-up code PCODE and thereby aresistance value of the pull-up reference resistance unit 150 iscontrolled. The controlled resistance value of the pull-up referenceresistance unit 150 affects a voltage of the pad ZQ which is the firstcalibration node and thereby the comparison operation and the countingoperation are repeated.

Consequently, a calibration operation of pull-up side is repeated untila resistance value of the pull-up reference resistance unit 150 becomesequal to a resistance value of the external resistor ER.

The pull-up code (PCODE<0:N>) being generated by the pull-up calibrationoperation is input to the dummy resistance unit 160 to determine a totalresistance value of the dummy resistance unit 160.

If a calibration operation of the pull-up side is completed, acalibration operation of the pull-down side starts. In the same manneras or similar manner to the calibration operation of the pull-up side,the calibration operation of the pull-down side is performed withrespect to the pull-down reference resistance unit 170 using thecomparison unit 143 and the counting unit 145. The pull-down calibrationoperation is performed so that a voltage of a second calibration node Abecomes the same as the reference voltage VREF, that is, a totalresistance value of the pull-down reference resistance unit 170 becomesthe same as a resistance value of the dummy resistance unit 160.

The code generated by the calibration operation (e.g., a ZQ calibrationcode) may be used to control an on-resistance value or on-dietermination values of the output driver. For example, the code may beapplied to the ZQ latches described in FIG. 3.

FIG. 5 is a flow chart of a ZQ calibration control in accordance withFIG. 3, according to one exemplary embodiment.

If in a step S410, a signal, that is, ZQS directing a ZQ calibrationoperation to start is received, in a step S412, it is checked whetherthe ZQS is received from the first die 100 b. The step S412 may beperformed by the ZQ controller 130 of FIG. 3.

In the case that the ZQS is received from the first die 100 b, in a stepS414, a ZQ calibration operation with respect to the first die 100 b isperformed before a ZQ calibration operation with respect to the seconddie 200 b.

In the case that the ZQS is not received from the first die 100 b, in astep S422, it is checked whether the ZQS is received from the second die200 b. In the case that the ZQS is received from the second die 200 b,in a step S424, a ZQ calibration operation with respect to the seconddie 200 b is performed before a ZQ calibration operation with respect tothe first die 100 b.

In a step S416, it is checked whether a ZQ calibration operation withrespect to the first die 100 b is completed. In the case that a ZQcalibration operation is completed, in a step S418, a ZQ calibrationoperation with respect to the second die 200 b begins. As the ZQSreceived through the first die 100 b is transmitted to the second die200 b through an interface, the ZQ calibration operation with respect tothe second die 200 b is performed like the operation method described inFIG. 3.

In a step S420, it is checked whether the ZQ calibration operation withrespect to the second die 200 b is completed. In the case that the ZQcalibration operation with respect to the second die 200 b is notcompleted, the procedure returns to the step S418 and in the case thatthe ZQ calibration operation with respect to the second die 200 b iscompleted, the ZQ calibration operation is over.

In a step S426, it is checked whether the ZQ calibration operation withrespect to the second die 200 b is completed. In the case that the ZQcalibration operation with respect to the second die 200 b is completed,in a step S428, a ZQ calibration operation with respect to the first die100 b begins. As the ZQS received through the second die 200 b istransmitted to the first die 100 b through an interface, the ZQcalibration operation with respect to the first die 100 b is performed.

In a step S430, it is checked whether the ZQ calibration operation withrespect to the first die 100 b is completed. In the case that the ZQcalibration operation with respect to the first die 100 b is notcompleted, the procedure returns to the step S428 and in the case thatthe ZQ calibration operation with respect to the first die 100 b iscompleted, the ZQ calibration operation is over.

In FIG. 5, although it is described that in the case that ZQS isreceived to the first die 100 b, a ZQ calibration operation with respectto the first die 100 b is performed first, a ZQ calibration operationwith respect to the second die 200 b may be performed first.

Although it is described that in the case that ZQS is received to thesecond die 200 b, a ZQ calibration operation with respect to the seconddie 200 b is performed first, a ZQ calibration operation with respect tothe first die 100 b may be performed first.

In case of a DDR DRAM, a ZQ command is used to perform an initialcalibration during a power up initial sequence. The ZQ command may beprovided, for example, after a reset signal is applied.

FIG. 6 is a drawing illustrating an application example of the inventiveconcept applied to a memory system being stacked through a TSV (throughsilicon via).

Referring to FIG. 6, an interface chip 3010 is located on the lowermostlayer and memory chips 3100, 3200, 3300 and 3400 are located on theinterface chip 3010. Each of the memory chips 3100, 3200, 3300 and 3400may be constituted by a plurality of dies like FIG. 1. The chips areconnected to one another through a micro bump (μ Bump) and signals beingapplied to the chips may be provided through a TSV (through siliconvia). For instance, the number of stacked chips may be two or more.

In FIG. 6, each of the memory chips 3100, 3200, 3300 and 3400 may beembodied by a multi channel semiconductor device made of two or moredies. In the case that information such as a ZQ signal or a reset signalis applied through one die, since the other die receives an operationcontrol signal in common through an internal interface, it is controlledtogether with the die to which the information is applied. In case ofembodying a semiconductor device by two or more dies, manufacturingyield of the semiconductor device is improved compared with a 2 channelsemiconductor device being formed in one die.

FIG. 7 is a drawing illustrating an application example of the inventiveconcept applied to an electronic system.

Referring to FIG. 7, a DRAM 3500, a central processing unit (CPU) 3150and a user interface 3210 are connected to one another through a systembus 3250.

In the case that an electronic system is a portable electronic device, aseparate interface may be connected to an external communication device.The communication device may be, for example, a DVD player, a computer,a set top box (STB), a game machine, a digital camcorder, etc.

The DRAM 3500 may be formed by packaging two or more dies 3550 and 3551in one package, for example in one of the configurations describedabove.

In one embodiment, if information such as a ZQ signal or a reset signalis applied through one die in the DRAM 3500, the other die receives anoperation control signal in common through an internal interface. Thus,the other die is controlled together with the die to which informationis applied. In case of embodying a multi channel semiconductor device bytwo or more dies, manufacturing yield of the semiconductor device isimproved compared with a 2 channel semiconductor device being formed inone die.

The bus 3250 may further adopt a flash memory in FIG. 7. However, theinventive concept is not limited thereto and various types ofnonvolatile storages may be used.

The nonvolatile storage may store data information having various typesof data such as a text, a graphic, a software code, etc.

FIG. 8 is a block diagram illustrating an application example of theinventive concept applied to a computing device.

Referring to FIG. 8, a computing device may include a memory system 4500including a DRAM 4520 and a memory controller 4510. The computing devicemay include an information processing device, a computer, etc. As anexample, the computing device may include a modem 4400, a CPU 4100, aRAM 4200, a user interface 4300 that are electrically connected to asystem bus 4250 besides the memory system 4500. The memory system 4500may store data processed by the CPU 4100 or data input from the outside.

In the case that the DRAM 4520 is a DDR4 DRAM, the DRAM 4520 may beembodied by two or more dies in a mono package while including aninternal interface like FIG. 2. Or the two or more dies may be packagedsuch as shown in FIGS. 1 or 3-5. Thus, manufacturing yield is improvedand thereby product cost of the computing device may be reduced.

The computing device may be applied, for example, to a solid state disk(SSD), a camera image processor and an application chipset. As anexample, the memory system 4500 may be constituted by a SSD and in thiscase, the computing device can stably and reliably store large amountsof data in the memory system 4500.

Since the memory system 4500 may include the DRAM 4520 like FIG. 2 orthe other embodiments described herein, computing device performance maybe improved. The memory controller 4510 is a DRAM 4520 having a multichannel function and can channel-independently apply a command, anaddress, data, or a control signal.

The CPU 4100 functions as a host and controls an overall operation ofthe computing device.

A host interface between the processor 4100 and the memory controller4510 includes various protocols to perform a data exchange between ahost and the memory controller 4510. The memory controller 4510 can beconfigured to communicate with a host or an external device through atleast one among various interface protocols such as a USB (universalserial bus) protocol, a MMC (multimedia card) protocol, a PCI(peripheral component interconnection) protocol, a PCI-E (PCI-express)protocol, an ATA (advanced technology attachment) protocol, a serial-ATAprotocol, a parallel-ATA protocol, a SCSI (small computer smallinterface) protocol, an ESDI (enhanced small disk interface) protocol,and an IDE (integrated drive electronics) protocol.

The device like FIG. 8 can be provided as one of various constituentelements of electronic devices such as a computer, an ultra mobile PC(UMPC), a digital picture player, a storage constituting a data center,a device that can transmit and receive information in a wirelessenvironment, one of various electronic devices constituting a homenetwork, one of various electronic devices constituting a computernetwork, one of various electronic devices constituting a telematicsnetwork, and one of various constituent elements constituting a RFIDdevice or a computing system.

FIG. 9 is a drawing illustrating an application example of the inventiveconcept applied to a smart phone.

Referring to FIG. 9, a block diagram of a cellular phone such as a smartphone fitted with a multi channel DRAM 515 is illustrated. The smartphone may include an antenna ATN 501, an analog front end block AFE 503,analog-digital modulation circuits ADC1 505 and ADC2 519, digital-analogmodulation circuits DAC1 507 and DAC2 517, a base band block BBD 509, aspeaker SPK 521, a liquid crystal display LCD 523, a mike MIK 525, andan input key KEY 527.

The analog front end block AFE 503 is constituted by an antenna switch,a band pass filter, all sorts of amplifiers, a power amplifier, a PLL(phase-locked loop), a voltage controlled oscillator VCO, an orthogonalmodulator and an orthogonal demodulator to execute an electric-wavetransmission/reception. The base band block 509 may include a signalprocessing circuit SGC 511, a base band processor BP 513 and a multichannel DRAM 515.

An operation of the smart phone of FIG. 9 is described. In case ofreceiving an image including a voice and text information, anelectric-wave input from an antenna is input to the analog-digitalmodulation circuit ADC1 505 through the analog front end block AFE 503and converted into a digital signal. An output signal of the ADC1 505 isinput to the signal processing circuit SGC 511 of the base band block509 and then voice and image processes are performed on the outputsignal. A voice signal is transmitted from the digital-analog modulationcircuit DAC2 517 to the speaker 521 and an image signal is transmittedto the liquid crystal display LCD 523.

In case of sending a voice signal, a signal input from the mike 525 isinput to the signal processing circuit SGC 511 through theanalog-digital modulation circuit ADC2 519 and then a voice process isperformed. An output of the SGC 511 is transmitted from thedigital-analog modulation circuit DAC1 507 to the antenna 501 throughthe analog front end block AFE 503. In case of sending text information,a signal input from the input key 527 is transmitted to the antenna 501through sequentially the base band block 509, the digital-analogmodulation circuit DAC1 507 and the analog front end block AFE 503.

In FIG. 9, the multi channel DRAM 515 may be embodied by a multi channelsemiconductor memory device having first and second dies like FIG. 2 orthe other embodiments described in connection with FIGS. 1-5. In thiscase, the multi channel DRAM 515 is accessed by the base band processorBP 513 through a first channel, and may also be accessed by anapplication processor not illustrated through a second channel. Onememory device can be shared by two processors to be used.

Although the multi channel DRAM 515 is illustrated in FIG. 9, in anotherembodiment, a MRAM may be used instead of the DRAM 515.

A volatile semiconductor memory device such as a SRAM or a DRAM losesits stored data when its power is interrupted.

In contrast, a nonvolatile semiconductor memory device such as a MRAMretains its stored data even when its power is interrupted. Thus, toretain stored data even when its power is interrupted, a nonvolatilememory device may be used to store data.

In the case that a STT-MRAM (spin transfer torque magneto resistiverandom access memory) constitutes a multi channel memory device, anadvantage of a MRAM may be added to an advantage of FIGS. 1-5.

A STT-MRAM cell may include a MTJ (magnetic tunnel junction) device anda select transistor. The MTJ device may include a fixed layer, a freelayer and a tunnel layer disposed between the fixed layer and the freelayer. A magnetization direction of the fixed layer is fixed and amagnetization direction of the free layer may be the same as that of thefixed layer or may be a reverse direction to the fixed layer dependingon the conditions.

FIG. 10 is a block diagram illustrating an application example of theinventive concept applied to a mobile device.

Referring to FIG. 10, a mobile device (e.g., a notebook, or a portableelectronic device) may include a micro processing unit (MPU) 1100, adisplay 1400, an interface unit 1300, a DRAM 1200, and a solid statedrive SSD 3000.

The micro processing unit (MPU) 1100, the DRAM 1200, and the solid statedrive SSD 3000 may be manufactured or packaged in a single package. TheDRAM 2000 and the flash memory (SSD) 3000 may be embedded in the mobiledevice.

The DRAM 2000 may be a memory embodied by two or more dies like FIG. 1.

In the case that the mobile device is a portable communication device, amodem and a transceiver performing functions of communication datatransmission and reception and data modulation and demodulation may beconnected to the interface unit 1300.

The MPU 1100 controls an overall operation of the mobile deviceaccording to the program previously set.

The DRAM 2000 is connected to the MPU 1100 through a system bus and mayfunction as a buffer memory or a main memory of the MPU 1100.

The flash memory 3000 may be a NOR or NAND type flash memory.

The display 1400 is a liquid crystal having a backlight, a liquidcrystal having a LED light source, or an OLED and may have a touchscreen. The display 1400 functions as an output device displaying animage such as character, number, picture, etc. by color.

The mobile device is mainly described as a mobile communication devicebut if necessary, may function as a smart card by adding or subtractingconstituent elements.

The mobile device may be connected to an external communication devicethrough a separate interface. The external communication device may be adigital versatile disc (DVD), a player, a computer, a set top box (STB),a game machine, a digital camcorder, etc.

Although not illustrated in the drawing, the mobile device may befurther provided with an application chipset, a camera image processor(CIS), a mobile DRAM, etc.

Although a flash memory is adopted in FIG. 10, various kinds ofnonvolatile storages may be used.

The nonvolatile storage may store data information having various typesof data such as a text, a graphic, a software code, etc.

FIG. 11 is a block diagram illustrating an application example of theinventive concept applied to an optical I/O schema.

Referring to FIG. 11, the memory system 30 adopting a high speed opticalI/O may include a chipset 40 as a controller and memory modules 50 and60 loaded on a PCB 31. The memory modules 50 and 60 are inserted intoslots 35_1 and 35_2 installed on the PCB 31 respectively. The memorymodule 50 may include a connector 57, a multi channel DRAMs 55_1˜55 _(—)n, an optical I/O input unit 51 and an optical I/O output unit 53.

The optical I/O input unit 51 may include a photoelectric conversiondevice (e.g., photodiode) for converting an optical signal being appliedinto an electrical signal. Thus, an electrical signal being output fromthe photoelectric conversion device is received to the memory module 50.The optical I/O output unit 53 may include an electrophotic conversiondevice (e.g., a laser diode) for converting an electrical signal beingoutput from the memory module 50 into an optical signal. If necessary,the optical I/O output unit 53 may further include an optical modulatorfor modulating a signal output from a light source.

An optical cable 33 performs an optical communication between theoptical I/O input unit 51 and an optical transmission unit 41_1 of thechipset 40. The optical communication may have a bandwidth of more thanseveral tens gigabits per second. The memory module 50 can receivesignals or data being applied from signal lines 37 and 39 of the chipset40 through the connector 57 and perform a high speed data communicationwith the chipset 40 through the optical cable 33. Resistors Rtminstalled on the lines 37 and 39 are termination resistors.

Thus, the chipset 40 can independently perform a data read operation anda data write operation by channels through the multi channel DRAMs55_1˜55 _(—) n. In this case, if a reset signal or a ZQ signal isapplied to one die, signals are applied to other dies through aninternal interface. Thus, a manufacturing cost is reduced withoutperformance degradation of the memory system 30.

In the case that the memory system of FIG. 11 is a SSD, the multichannel DRAMs 55_1˜55 _(—) n may be used as a user data buffer.

FIG. 12 is a block diagram illustrating an application example of theinventive concept applied to a portable multimedia device.

Referring to FIG. 12, a portable multimedia device 500 may include an AP510, a memory device 520, a storage device 530, a communication module540, a camera module 550, a display module 560, a touch panel module 570and a poser module 580.

The AP 510 can perform a data processing function.

In FIG. 12, the memory device 520 can be constituted by thesemiconductor device such as illustrated in FIGS. 1-5. Thus, amanufacturing cost of a portable multimedia device may be reduced.

The communication module 540 connected to the AP 510 may function as amodem performing functions of communication data transmission andreception and data modulation and demodulation.

The storage device 530 may be embodied by a NOR or NAND type flashmemory to store large amounts of data.

The display module 560 may be embodied by a liquid crystal having abacklight, a liquid crystal having a LED light source, or an OLED. Thedisplay module 560 functions as an output device displaying an imagesuch as character, number, picture, etc. by color.

The touch panel module 570 can provide a touch input to the AP 510single-handedly or on the display module 560.

The portable multimedia device is mainly described as a mobilecommunication device but if necessary, may function as a smart card byadding or subtracting constituent elements.

The portable multimedia device may be connected to an externalcommunication device through a separate interface. The externalcommunication device may be a digital versatile disc (DVD), a player, acomputer, a set top box (STB), a game machine, a digital camcorder, etc.

The power module 580 performs a power management of the portablemultimedia device. In the case that a PMIC scheme is applied in theportable multimedia device, power saving is accomplished.

The camera module 550 includes a camera image processor (CIS) and isconnected to the AP 510.

Although not illustrated in the drawing, the portable multimedia devicemay be further provided with another application chipset, or a mobileDRAM, etc.

FIG. 13 is a block diagram illustrating an application example of theinventive concept applied to a personal computer.

Referring to FIG. 13, a personal computer 700 may include a processor720, a chipset 722, a data network 725, a bridge 735, a display 740, anonvolatile storage 760, a DRAM 770, a keyboard 736, a microphone 737, atouch unit 738 and a pointing device 739.

In FIG. 13, the DRAM 770 may be manufactured by two or more dies like inFIGS. 1-5. In one embodiment, if at least two dies are equally formed ona wafer through a semiconductor manufacturing process, first and seconddies formed so as to have an independent channel are separated from thewafer. After that, the second die is spaced apart from the first die tobe disposed in the same package. The dies may be disposed in a mirrordie form, in one embodiment.

An internal interface for transmitting a signal between the first andsecond dies is formed. The first and second dies interconnected throughthe internal interface may be packaged in a single package.

The chipset 722 can apply a command, an address, data, or a controlsignal to the DRAM 770.

The processor 720 functions as a host and controls an overall operationof the computing device 700.

A host interface between the processor 720 and the chipset 722 includesvarious types of protocols for performing a data communication.

The nonvolatile storage 760 may be embodied by an electrically erasableprogrammable read-only memory (EEPROM), a flash memory, a magneticrandom access memory (MRAM), a spin-transfer torque MRAM, a conductivebridging RAM (CBRAM), a ferroelectric RAM (FeRAM), a phase change RAM(PRAM) which is called an ovonic unified memory (OUM), a resistive RAM(RRAM), a nanotube RRAM, a polymer RAM (PoRAM), a nanotube floating gatememory (NFGM), a holographic memory, a molecular electronics memorydevice, or an insulator resistance change memory.

The personal computer of FIG. 13 may be changed or extended to an ultramobile PC (UMPC), a workstation, a net-book, a personal digitalassistants (PDA), a portable computer, a web tablet, a tablet computer,a wireless phone, a mobile phone, a smart phone, an e-book, a portablemultimedia player (PMP), a portable game machine, a navigation device, ablack box, a digital camera, a digital multimedia broadcasting (DMB)player, a three dimensional television, a smart television, a digitalaudio recorder, a digital audio player, a digital picture recorder, adigital picture player, a digital video recorder, a digital videoplayer, a storage constituting a data center, a device that can transmitand receive information in a wireless environment, one of variouselectronic devices constituting a home network, one of variouselectronic devices constituting a computer network, one of variouselectronic devices constituting a telematics network, and one of variousconstituent elements constituting a RFID device or a computing system.

FIG. 14 is a block diagram illustrating a modified embodiment of thesemiconductor device of FIG. 1.

Referring to FIG. 14, a multi channel semiconductor device 300 aincludes four chips 100, 200, 100-1 and 200-1 constituted by four dies.

An interconnection for interfacing is formed between the first andsecond chips 100 and 200 and an interconnection for interfacing isformed between the third and fourth chips 100-1 and 200-1.

The multi channel semiconductor device 300 a in a mono package includes4 channels.

The first chip 100 and the second chip 200 are constituted by two diesand perform the same data input/output operation as the 2 channelsemiconductor memory device manufactured in a mono die.

The third chip 100-1 and the fourth chip 200-1 are constituted by twodies and perform the same data input/output operation as the 2 channelsemiconductor memory device manufactured in a mono die.

FIG. 15 is a block diagram illustrating an internal constitution of onechip of FIG. 14, according to one exemplary embodiment.

Referring to FIG. 15, the first chip 100 may have a block constitutionsuch as illustrated in FIG. 14.

The first chip 100 may include a memory cell array 160, a senseamplifier & input/output circuit 158, an I/O buffer 162, a buffer 152, alow decoder 154, a column decoder 156, and a control circuit 151.

The memory cell array 160 may be constituted by DRAM memory cellsconstituted by one access transistor and on storage capacitor. Thememory cells may be arranged in rows and columns. In the drawing, thememory cell array 160 is divided into 4 banks but this is onlyillustrative. The memory cell array 160 may be designed by at least onebank.

The control circuit 151 receives a control signal and an address signalbeing applied to generate an internal control signal for controllingoperation modes set.

The buffer 152 receives an address being applied to perform a buffering.In response to the internal control signal, the buffer 152 provides arow address of selecting a row of the memory cell array 160 to the rowdecoder 154 and provides a column address of selecting a column of thememory cell array 160 to the column decoder 156.

The buffer 152 receives a command being applied to perform a buffering.The command is applied to the control circuit 151 to be decoded.

The row decoder 154 decodes the row address in response to the internalcontrol signal. If a result of row address decoding is applied to thememory cell array 160, a selected word line among a plurality of wordlines connected to memory cells is driven.

The column decoder 156 decodes the column address in response to theinternal control signal. A column gating is performed according to adecoded column address. As a result of the column gating, a selected bitline among bit lines connected to memory cells is driven.

The sense amplifier & input/output circuit 158 detects a potential beingappeared on a bit line of the selected memory cell to sense data storedin the selected memory cell.

The I/O buffer 162 buffers data being input. In a read operation mode,the I/O buffer 162 buffers data read out from the sense amplifier &input/output circuit 158 to output the buffered data to a channel CHi.

According to some embodiments of the inventive concept, sinceinformation is transmitted to counterpart dies through an internalinterface, a multi channel semiconductor device is embodied by two ormore mono dies. Thus, as compared with a multi channel semiconductordevice embodied by one mono die, manufacturing yield is improved andthereby a manufacturing cost is reduced.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. An operation method of a semiconductor devicethat includes separate first and second dies in a package and receivesfirst types of signals through first and second respective channelsindependent of each other and corresponding to the first and secondrespective dies, the method comprising: a step in which when informationfor controlling internal operations of the first and second dies isfirst applied to the first die through a first pad, the first dieperforms the internal operation and also transmits the information tothe second die through an internal interface connecting the first dieand the second die; and a step in which when the information istransmitted to the second die, the second die performs the internaloperation.
 2. The operation method of the semiconductor device of claim1, wherein the first and second dies are each packaged directly on asame, single package substrate.
 3. The operation method of thesemiconductor device of claim 1, wherein the first and second dies areindependently packaged on different package substrates.
 4. The operationmethod of the semiconductor device of claim 1, wherein the informationis one of a reset signal for resetting operations of the first andsecond dies and a ZQ signal for ZQ calibration operations of the firstand second dies.
 5. The operation method of the semiconductor device ofclaim 1, wherein the internal interface is one of a wired interface anda wireless interface for information interfacing between the first andsecond dies.
 6. The operation method of the semiconductor device ofclaim 5, wherein the internal interface is a wired interface thatincludes at least one of an interposer, a wire bonding and a printedcircuit board.
 7. The operation method of the semiconductor device ofclaim 5, wherein the internal interface is a wireless interface thatperforms an optical communication.
 8. The operation method of thesemiconductor device of claim 1, wherein the first and second dies havethe same storage capacity and physical size as each other.
 9. Theoperation method of the semiconductor device of claim 1, wherein thefirst and second separate dies form a DDR DRAM performing the same dataaccess operation as a 2 channel single die.
 10. A semiconductor devicecomprising: a package substrate; a first die on the package substratehaving a first channel to function as a first chip and a first pad toreceive a information for controlling the first die; a second die on thepackage substrate having a second channel to function as a second chipand a second pad to receive the information for controlling the seconddie, wherein the information is applied to one of the first die and thesecond die, wherein the second channel is different from the firstchannel and the second die has same storage capacity and physical sizeas the first die; and an internal interface that connects the first andsecond dies, the internal interface configured to transmit theinformation to the second die when the information is applied to thefirst die and transmit the information to the first die when theinformation is applied to the second die.
 11. The semiconductor deviceof claim 10, wherein the first and second dies are each packageddirectly on the package substrate.
 12. The semiconductor device of claim10, wherein the information is one of a reset signal for resettingoperations of the first and second dies and a ZQ signal for ZQcalibration operations of the first and second dies.
 13. Thesemiconductor device of claim 10, wherein the first die is horizontallyadjacent the second die.
 14. The semiconductor device of claim 10,wherein the semiconductor device is configured such that: informationhaving a first type is transmitted to the first die through the firstchannel without passing between the first die and the second die, and istransmitted to the second die through the second channel without passingbetween the first die and the second die; and the information forcontrolling internal operations of the first and second dies is adifferent type of information from the first type.
 15. A semiconductordevice comprising: a package substrate; a first chip mounted on thesubstrate; a second chip mounted on the substrate to be horizontallyadjacent the first chip; a first channel connected to the first chip forreceiving a first type of information at the first chip; a secondseparate channel connected to the second chip for receiving the firsttype of information at the second chip; and an internal interfaceconnected between the first chip and the second chip, the internalinterface configured to transmit a second type of information differentfrom the first type between the first chip and the second chip, whereinthe second type of information is used by both the first chip and thesecond chip.
 16. The semiconductor device of claim 15, wherein: thefirst type of information is read/write access information; and thesecond type of information is operation control information applied toboth the first chip and the second chip to control operation of therespective chips.
 17. The semiconductor device of claim 16, wherein: thesecond type of information relates to a reset command or a ZQ command.18. The semiconductor device of claim 15, wherein the semiconductordevice is configured such that: information having the first type istransmitted to the first chip through the first channel without passingbetween the first chip and the second chip, and is transmitted to thesecond chip through the second channel without passing between the firstchip and the second chip.
 19. The semiconductor device of claim 18,wherein: the second type of information is operation control informationfor the first and second chips.
 20. The semiconductor device of claim15, further comprising: a control circuit on at least one of the firstand second chips, and configured to receive information of the secondtype.